The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 30, 1996

Filed:

Feb. 17, 1995
Applicant:
Inventors:

Nozomu Matsuo, Yokohama, JP;

Hideyuki Omura, Chigasaki, JP;

Takesi Kawaguchi, Hiratsuka, JP;

Yukihisa Sinoda, Kashiwa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04J / ;
U.S. Cl.
CPC ...
319133 ; 319180 ; 319173 ; 372 38 ;
Abstract

There is provided a phototransmission method that can effectively avoid any deterioration by beats in the optical signal quality of a phototransmission system and transmit signals to a single receiving station with a substantially equal light intensity level even if only a narrow gap is provided for any two close wavelengths that are used for signal transmission and if the wavelength of the laser beam emitted from each semiconductor laser diode of the system is allowed to fluctuate only within a narrow limit so that the system may accommodate a large number of different light waves (transmitting stations). The light intensity level of optical signals produced at the optical output terminal of each semiconductor laser diode 3 is regulated by setting the bias current of the semiconductor laser diode 3 to a value between one and a half times and five times the threshold current of the semiconductor laser diode. Alternatively, the light intensity level of optical signals produced at the optical output terminal of each semiconductor laser diode 3 is regulated by setting the bias current of the semiconductor laser 3 to a value between twice and four times the threshold current of the semiconductor laser diode. Preferably, the light intensity levels of optical signals produced by different semiconductor laser diodes 3 of he optical transmission system are regulated by respective optical attenuators 4 operating for different degrees of attenuation.


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