The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 1996
Filed:
Mar. 02, 1995
Masaaki Abe, Wako, JP;
Ken-ichi Nonaka, Wako, JP;
Honda Giken Kogyo Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device is provided with a surface-inactivated semiconductor layer provided on the surface of a compound semiconductor on which surface a semiconductor layer forming the depletion layer is provided, the semiconductor layer forming the depletion layer being of a conduction type opposite that of the compound semiconductor, and having a carrier density and thickness being capable of forming a depletion layer on the compound semiconductor. When a depletion layer is formed on the surface of the compound semiconductor by the semiconductor layer forming the depletion layer, the depletion layer has no charge so that the concentration of electrical fields is relaxed, the surface of the semiconductor is stabilized, and excellent dielectric breakdown performance is obtained.