The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 1996
Filed:
Feb. 27, 1995
Byung J Cho, Kyungki-Do, KR;
Hyundai Electronics Industries Co., Ltd., Kyungki-Do, KR;
Abstract
A method for forming an oxide film in a semiconductor device comprises a pre-oxidation process, a main oxidation process and a post-oxidation process. N.sub.2 O gas is used for the pre-oxidation process, a mixed gas of N.sub.2 O gas and NH.sub.3 gas is used for the main oxidation process, and N.sub.2 O gas is used for the post-oxidation process. The insulation characteristics of the oxide film are increased by introducing nitrogen, and amount of introduced nitrogen can be regulated by the controlling of amount of NH.sub.3 gas. Also, the problems encountered when NH.sub.3 gas and N.sub.2 O gas are used separately for the oxidation process can be solved by using of the mixed gas of NH.sub.3 gas and N.sub.2 O gas.