The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 1996
Filed:
Apr. 03, 1995
Applicant:
Inventors:
Assignee:
Motorola Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 31 ; 437-6 ; 437 40 ; 437 41 ; 437974 ; 148D / ;
Abstract
A method of fabricating a fast-switching, low-R(on) insulated-gate bipolar transistor including providing an N-type semiconductor wafer with a planar surface, forming a thin heavily-doped layer, having a concentration in the range of 3.times.10.sup.17 /cm.sup.3 to 1.times.10.sup.19 /cm.sup.3, in the wafer adjacent the planar surface, providing a P-type semiconductor wafer, and bonding a surface of the P-type wafer to the planar surface of the N-type wafer. An emitter and a gate are then formed in the N-type wafer in the usual manner and a collector is formed on the P-type wafer.