The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 1996
Filed:
Jun. 15, 1993
Hitachi, Ltd., Tokyo, JP;
Abstract
A method of forming a thin film by a bias sputtering method using a first target made of a refractory metal mainly composed of W and a second target made of a conductive material mainly composed of a low-melting-point metal which comprises, upon sputtering the first target made of the refractory metal mainly composed of W, decreasing high energy particles incident to a substrate in a state where a desired bias voltage is applied to a substrate thereby forming a thin film of the refractory metal mainly composed of W with low resistivity and less stress and, subsequently, upon sputtering the second target made of the conductive material mainly composed of the low-melting-point metal, accelerating the growth of crystals in a state where a desired voltage is applied to a substrate thereby forming in lamination a thin film of the conductive material mainly composed of the low-melting-point metal with a large crystal grain size on the thin film made of the refractory metal mainly composed of W.