The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 1996
Filed:
Mar. 21, 1995
Applicant:
Inventors:
Gui C Xu, Beijing, CN;
Iam K Sou, Kowloon, HK;
Kam S Wong, Kln, HK;
Hong Wang, Kowloon, HK;
Zhi U Yang, Kowloon, HK;
George K Wong, Kowloon, HK;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148 334 ; 148 335 ; 437127 ; 437133 ;
Abstract
A novel photoluminescent material is disclosed comprising an active layer of ZnS.sub.1-x Te.sub.x deposited directly onto a substrate by molecular beam epitaxy. The emitted light is primarily in the blue end of the spectrum. The substrate may be GaAs or more preferably Si. Depositing the material directly onto Si allows the material to be used to manufacture integrated semiconductor light emitting devices. High efficiency may be obtained at low concentrations of Te (0.01.ltoreq.x.ltoreq.0.07) which allow good lattice matching of the active layer to an Si substrate.