The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 1996
Filed:
Mar. 04, 1994
Mutsuhiro Mori, Hitachi, JP;
Yasumichi Yasuda, Hitachi, JP;
Hiroyuki Ozawa, Katsuta, JP;
Jin Onuki, Hitachi, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A first power semiconductor device with a semiconductor base to which an emitter wire electrode is connected through an emitter bonding pad and a gate wire electrode is connected through a gate bonding pad, wherein the gate bonding pad comprises a silicon oxide film, a silicon crystal layer and a gate wiring electrode made of aluminum containing silicon which are successively formed on the semiconductor base, and the gate wire electrode is connected to the gate wiring electrode. A second power semiconductor device wherein the emitter bonding pad is an emitter wiring electrode made of aluminum containing silicon which is directly formed on the semiconductor base, and the emitter wire electrode is bonded to the emitter wiring electrode.