The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 1996
Filed:
Dec. 28, 1994
Applicant:
Inventors:
Wendell P Noble, Jr, Milton, VT (US);
Ashwin K Ghatalia, Hopewell Junction, NY (US);
Badih El-Kareh, Hopewell Junction, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257301 ; 257305 ; 257397 ; 257623 ;
Abstract
A semiconductor structure comprising a transistor having a gate conductor that has first and second edges bounded by raised isolation structures (e.g. STI). A source diffusion is self-aligned to the third edge and a drain diffusion is self-aligned to the fourth edge of the gate electrode.
Noble, Jr, Wendell. (1996). Mosfet with raised sti isolation self-aligned to the gate stack (U.S. Patent No. 5539229). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5539229
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile