The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 1996
Filed:
Sep. 29, 1994
Sungho Jin, Millington, NJ (US);
Mark T McCormack, Summit, NJ (US);
Henry M O'Bryan, Jr, Plainfield, NJ (US);
Warren W Rhodes, Raritan, NJ (US);
Thomas H Tiefel, North Plainfield, NJ (US);
AT&T Corp., Murray Hill, NJ (US);
Abstract
Materials of composition La.sub.v X.sub.w M.sub.y Mn.sub.z O.sub.x, with x selected from Mg, Sc, Al, Zn, Cd, In and the rare earths that have an ionic radius smaller than that of La, with M selected from Ca, Sr, Ba and Pb, and with v, w, y, z and x in the ranges 0.45-0.85, 0.01-0.20, 0.20-0.45, 0.7-1.3 and 2.5-3.5, respectively, can have substantially improved magnetoresistance (MR) ratios, as compared to the corresponding X-free comparison material. In particular, the novel materials in polycrystalline (or non-epitaxial thin film) form can have relatively large MR ratios. For instance, polycrystalline La.sub.0.60 Y.sub.0.07 Ca.sub.0.33 MnO.sub.x had a peak MR ratio in excess of 10,000% (in absolute value) in a field of 6 T.