The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 1996
Filed:
Jan. 11, 1995
Applicant:
Inventor:
Hideaki Saito, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 89 ; 117 93 ; 117108 ; 117954 ;
Abstract
A crystal growth method is based on a molecular beam epitaxy method. The crystal growth method includes the steps of opening/closing a shutter member provided between a deposition source and a substrate in an ultra-high vacuum so as to form a region having a predetermined pattern on the substrate and forming a crystal growth layer only in the region having the pattern on the substrate during an epitaxial growth step.