The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 1996
Filed:
Jun. 23, 1993
Ronen Perets, Ramat-Gan, IL;
Yair Be'ery, Petach-Tikva, IL;
Bat-Sheva Ovadia, Herzeliya, IL;
Yael Gross, Tel-Aviv, IL;
Yakov Milstein, Natanya, IL;
Gideon Wertheizer, Petach-Tikva, IL;
DSP Semiconductors Ltd., San Jose, IL;
DSP Semiconductors USA, Inc., San Jose, CA (US);
Abstract
A data processing and addressing unit for processing a set of either first or second type instructions having associated therewith operands stored in a single memory bank and operands stored in two memory banks, respectively. First and second memory banks are mapped in continuous memory address space such that a bottom address of the second memory bank is contiguous with a top address of the first memory bank. A method is employed for mapping the first and second memory banks so as to permit memory expansion or contraction while permitting the first and second memory banks to be configured as a single continuous buffer or as two distinct buffers, as required. According to the method, the first memory bank is mapped as a negative offset with respect to the bottom address of the second memory bank such that the top address of the first memory bank has an offset of -1 and a bottom address thereof has an offset of -(first size); and the second memory bank is mapped as a positive offset with respect to the bottom address of the second memory bank such that a top address thereof has an offset of (second size - 1). Expansion or contraction of the first and second memory banks may thus be effected relative to a common boundary between the two memory banks and independent of their respective sizes.