The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 1996
Filed:
Jun. 05, 1995
Applicant:
Inventors:
Takao Akaogi, Kawasaki, JP;
Masanobu Yoshida, Kawasaki, JP;
Yasushige Oqawa, Kasuqai, JP;
Yasushi Kasa, Kawasaki, JP;
Shouichi Kawamura, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365205 ; 36518521 ; 327 51 ;
Abstract
When a current flows through a selected memory cell transistor at the time of data reading, the gate voltage of an n-channel MOS transistor, which makes up the current flowing through the load, rises. Thus, when a current flows through a selected memory cell transistor at the time of data reading, the current through the load is increased so that the time required for data reading when the current flows through the selected memory cell transistor can be shortened and the data reading can be effected at a high speed.