The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 1996
Filed:
Jun. 03, 1994
Takahiko Yoshida, Okazaki, JP;
Kazushi Asami, Okazaki, JP;
Muneo Yorinaga, Anjo, JP;
Yoshimi Yoshino, Inuyama, JP;
Nippon Soken, Inc., Nishio, JP;
Nippondenso Co., Ltd., Kariya, JP;
Abstract
A plasma etching process for forming a recess or opening on a silicon substrate by generating plasma between a pair of electrodes in an anode-coupled planar-type plasma etching apparatus and etching the silicon substrate located on one of the electrodes with the plasma, an improvement residing in that an etchant is a mixed gas of sulfur hexafluoride and oxygen and an etching mask covering the substrate, except for a portion where the recess or opening is to be formed, is made of chromium or a chromium compound. Preferably the distance between the electrodes is 10 to 30 mm, the volume ratio of sulfur hexafluoride to oxygen is 90:10 to 60:40, the pressure of the etchant gas is 0.15 to 0.4 Torr (20 to 53 Pa), and the temperature of the substrate is not less than 40.degree. C.