The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 1996

Filed:

Jul. 29, 1994
Applicant:
Inventors:

Stephen J Harris, Bloomfield Hills, MI (US);

Anita M Weiner, West Bloomfield, MI (US);

Gary L Doll, Southfield, MI (US);

Brian K Fuller, Shelby Township, Macomb County, MI (US);

Assignee:

General Motors Corporation, Detroit, MI (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
216 37 ; 216 64 ; 216 67 ; 216 74 ; 2041921 ;
Abstract

The invention generally includes a new technique for making cubic boron nitride films with low contamination from other forms of boron nitride such as hexagonal and amorphous boron nitride. Films including either hexagonal or amorphous boron nitride are etched in a gas atmosphere including a halogen and/or hydrocarbon radical, preferably a methyl radical (CH.sub.3 ). Such atmospheres may be a plasma etching atmosphere also including hydrogen and hydrogen atoms. The etching technique is successful in removing hexagonal or amorphous boron nitride and leaving cubic boron nitride, or in converting hexagonal or amorphous boron nitride into cubic boron nitride, thus increasing the concentration of cubic boron nitride in the film. Interestingly, little or no etching of hexagonal or amorphous boron nitride occurs using only hydrogen or hydrogen atoms.


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