The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 1996
Filed:
Apr. 27, 1995
Applicant:
Inventors:
Shigetaka Murasato, Chichibu, JP;
Koichi Hasegawa, Chichibu, JP;
Assignee:
Showa Denko K.K., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 94 ; 257101 ; 257102 ;
Abstract
An epitaxial wafer for a light-emitting diode comprises an n-GaAs single crystal substrate on which a Si-doped n-Ga.sub.1-x Al.sub.x As epitaxial layer, a Si-doped p-Ga.sub.1-y Al.sub.y As active layer, and a p-Ga.sub.1-z Al.sub.z As window layer are epitaxially formed, and in which the window/layer has a Si concentration of below 1.times.10.sup.18 cm.sup.-3.
Murasato, Shigetaka. (1996). Epitaxial wafer for light-emitting diode (U.S. Patent No. 5534717). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5534717
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile