The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 1996
Filed:
Apr. 29, 1994
Ronald B Goldner, Lexington, MA (US);
Semyon Slaven, Newton, MA (US);
Tufts University, Medford, MA (US);
Abstract
Transparent, electrically-conductive, ion-blocking layers suitable for use in electrochromic windows. Preferably, one such layer is interposed between the electrochromic layer and its adjacent electron-conductive layer, and another such layer is interposed between the counter-electrode layer and its adjacent electron-conductive layer. Each of the transparent, electrically-conductive, ion-blocking layers comprises an n-type lithium-doped silicon carbide thin film formed by rf diode sputtering. In addition to being suitable for use in electrochromic windows, the n-type lithium-doped silicon carbide thin films of the present invention may also be used in a variety of electronic devices and may be combined, for example, with p-type silicon carbide films, either doped or undoped, in various p-n junction devices, such as LED's, high temperature diodes, etc.