The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 1996

Filed:

Dec. 28, 1994
Applicant:
Inventor:

Sang H Woo, Kyoungki-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 52 ; 437 47 ; 437 60 ; 437919 ;
Abstract

There is disclosed a method for the fabrication of a capacitor of a DRAM, comprising the characteristic steps of: forming a bellows type storage electrode; depositing an impurity-doped polysilicon film on the entire surface of the storage electrode; and diffusing the dopants into impurity-rare edge portions of the storage electrode through an annealing treatment. Accordingly, it is capable of easily securing the capacitance of a capacitor in greater quantity per unit area, and thus, effects a reduction in production cost.


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