The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 1996
Filed:
Oct. 28, 1994
Applicant:
Inventor:
Ken-ichi Oyama, Tokyo, JP;
Assignee:
NEC Corporation, , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
36518501 ; 365218 ; 36518529 ; 36518518 ;
Abstract
In an EEPROM, a substrate is grounded, and a voltage supply voltage (5 V) and a high voltage (12 V) are applied to a drain region and a control gate, respectively, while maintaining a source region in a floating condition, so that a voltage stress is applied to a tunnel gate oxide film. As a result, electrons trapped in the tunnel gate oxide film are extracted to a floating gate. Thus, deterioration of the tunnel gate oxide film which is caused by repetition of write/erase, will be recovered.
Oyama, Ken-ichi. (1996). Non-volatile semiconductor memory device and method for recovering write (U.S. Patent No. 5530669). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5530669
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile