The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 1996
Filed:
Jan. 09, 1995
Shintaro Yamamichi, Tokyo, JP;
Yoichi Miyasaka, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A thin film capacitor uses a dielectric film of high dielectric constant. A lower electrode is disposed on a contact, an interlayer insulating film is in contact with the lower electrode, a dielectric film of high dielectric constant covers the lower electrode, and an upper electrode covers the dielectric film. Thicknesses of the dielectric film at lower end portions of the lower electrode are thin but thick enough to make a leakage current value lower than a tolerable value thereof. At locations immediately below the lower electrode, the interlayer insulating film has portions whose thicknesses are larger than thicknesses of other portions thereof. The interlayer insulating film is such that, immediately below the regions of the dielectric film which are located at lower end portions of sides of the lower electrode and at which thicknesses of the dielectric film are very thin, the thicknesses of the interlayer insulating film are made larger than the rest thereof, or the dielectric film is such that lower end portions thereof are thin but thick enough to make a leakage current value lower than a tolerable value thereof. In this way, the occurrence of leakage current at the lower end portions of the lower electrode is suppressed.