The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 1996
Filed:
Oct. 05, 1994
Applicant:
Inventors:
Masanori Yamamoto, Tokyo, JP;
Masami Sawada, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 40 ; 437 41 ; 437 44 ; 437 45 ; 437 27 ;
Abstract
A method of manufacturing a MOSFET having a p-type gate electrode made of polycrystalline silicon formed through a gate insulating film on a surface of a conductive semiconductor substrate. The gate electrode contains an n-type impurity in addition to a boron impurity. Low threshold voltage can be obtained with less fluctuation. Preferably, the n-type impurity is phosphorus and/or arsenic, and the concentration thereof ranges from 5.times.10.sup.18 to 1.times.10.sup.20 cm.sup.-3. A channel, which is formed in the surface of the gate insulating film side of the substrate, preferably has a positive polarity.