The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 1996
Filed:
Jul. 19, 1994
Akihiro Shima, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor laser includes a first conductivity type semiconductor substrate having opposite first and second surfaces, a first conductivity type semiconductor layer grown on the first surface, a thin GaInP or AlGaInP active layer having a band gap energy smaller than that of the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer having a band gap energy larger than that of the active layer. The first conductivity type semiconductor layer has a first crystal plane that provides a quantum wire structure of the active layer and second crystal planes disposed at opposite sides of the first crystal plane. The first crystal plane forms a first angle smaller than a prescribed angle with a {100} surface, and the second crystal plane forms a second angle larger than the first angle with the {100} surface. The active layer is grown under growth conditions that produce atoms ordered opposite {100} surface and provide the active layer in a disordering state wherein atoms opposite a surface forming an angle with the {100} surface. Therefore, a semiconductor laser including a quantum wire with improved quantum effect is realized.