The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 1996
Filed:
Feb. 02, 1995
Jimmie L Russell, Santa Rosa, CA (US);
Scott S Elliott, Santa Rosa, CA (US);
Shih-Yuan Wang, Palo Alto, CA (US);
Other;
Abstract
The elimination of the spatial variation in the frequency response of large area p-i-n photodiodes is disclosed using indium tin oxide (ITO) n.sup.+ material as a transparent contact overlayer. The I-V, C-V, and frequency response characteristics are shown for p-i-n photodiodes fabricated with and without the ITOn.sup.+ contact overlayer to demonstrate the superior performance of the indium-tin-oxide p-i-n photodiode. Also, a p-i-n photodiode can be structured using an ITOn.sup.+ window layer to extend the operating range to shorter optical wavelengths, for example, from 1.0 .mu.m down to 0.4 .mu.m.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile