The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 1996
Filed:
Oct. 11, 1994
Applicant:
Inventor:
Peter C Hunt, Northampton, GB;
Assignee:
Phoenix VLSI Consultants Limited, Towcester, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257378 ; 257370 ; 257588 ;
Abstract
A bipolar transistor module which can be implemented into existing CMOS processes without the use of buried layers of epitaxy is described. The transistor makes use of a synthesis of new ideas to achieve high performance. Extended polysilicon electrodes (2,4,6) are utilised to reduce device dimensions and a compatible well is described which maintains a p-channel MOS transistor electrical characteristics whilst lowering the collector series resistance.
Hunt, Peter. (1996). Bipolar transistor having a collector well with a particular (U.S. Patent No. 5528066). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5528066
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile