The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 1996
Filed:
Oct. 15, 1993
Matsushita Industrial Electric Co., Ltd., Osaka, JP;
Abstract
A thin-film transistor of an inverted-staggered structure includes a semiconductor layer with a channel portion, a protective insulating film extending on the channel portion of the semiconductor layer, a source electrode, and a drain electrode. The protective insulating film has a rectangular shape with four corners, and each of two of the corners overlaps one of the source electrode and the drain electrode while two others of the corners overlap neither the source electrode nor the drain electrode. The thin-film transistor may be modified so that one of the corners overlaps one of the source electrode and the drain electrode while three others of the corners overlap neither the source electrode nor the drain electrode.