The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 1996
Filed:
Feb. 18, 1994
Applicant:
Inventors:
Junichi Nishizawa, Miyagi, JP;
Kenji Aoki, Tokyo, JP;
Assignee:
Seiko Instruments Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437160 ; 437939 ; 437950 ;
Abstract
For effecting impurity doping, a chemically active semiconductor surface is covered with an adsorption layer composed of an impurity element which forms a dopant in the semiconductor or composed of a compound containing the impurity element. Thereafter, solid phase diffusion is effected using the adsorption layer as an impurity diffusion source so as to form an impurity-doped region having a desired density profile in the depth direction.
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Nishizawa, Junichi. (1996). Impurity doping method with adsorbed diffusion source (U.S. Patent No. 5527733). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5527733
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile