The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 1996
Filed:
Dec. 28, 1994
Hisaharu Seita, Kanagawa, JP;
Kazuhiro Tajima, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A process for producing a semiconductor device which includes a step of drawing out the impurities contained in the electrode film and/or insulating film and contributing to the growth of the insulating film before the heat treatment for activating the electrode film. The step of drawing out the impurities is a step of preliminary heat treatment at a temperature at least the film-forming temperature of the electrode film and no more than the growth temperature of the insulating film. The preliminary heat treatment is preferably performed at a temperature of 450.degree. C. to 800.degree. C., more preferably 450.degree. C. to 700.degree. C. The preliminary heat treatment may be performed after the formation of the electrode film or may be performed during the formation of the electrode film after each formation of one or more thin film layers for forming the electrode film.