The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 1996
Filed:
Dec. 20, 1994
Yuji Fukazawa, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A silicon wafer is placed in an atmosphere of hydro-fluoric acid vapor, dissolving an oxide film formed on a surface of the wafer and forming solution drops containing impurities. A Teflon plate is put on the surface of the silicon wafer, such that its hydrophilic surface is set in contact with the HF solution drops. The drops are transferred to the hydrophilic surface of the Teflon plate. Fluorescent X rays are applied to the hydrophilic surface of the Teflon plate and totally reflected the hydrophilic surface. The energy peaks of the impurities, including aluminum whose energy peak is similar to that of silicon, are detected from the fluorescent X rays totally reflected. Also, the distribution of the impurities in the surface of the wafer are determined from the fluorescent X rays.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile