The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 1996
Filed:
Jul. 21, 1995
Applicant:
Inventors:
William S Hobson, Summit, NJ (US);
John Lopata, North Plainfield, NJ (US);
Fan Ren, Warren, NJ (US);
Assignee:
AT&T Corp., Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
1566431 ; 437129 ;
Abstract
In-containing III/V semiconductor materials (e.g., InGaP) can be dry etched in BCl.sub.3 in ECR apparatus. We have discovered that addition of N.sub.2 to the BCl.sub.3 can result in substantially higher etch rate (e.g., more than 50% higher). Etching is substantially without incubation period, and the resulting surface can be very smooth (e.g., RMS roughness less than 5 nm, even less than 2.5 nm). Exemplarily, the novel etching step is used in the manufacture of a InGaP/GaAs transistor.