The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 1996
Filed:
Feb. 24, 1995
Papu D Maniar, Austin, TX (US);
Robert W Fiordalice, Austin, TX (US);
Kevin G Kemp, Austin, TX (US);
Bernard J Roman, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
An anti-reflective coating (ARC) (20) is formed over a reflective, conductive layer (18), such as polysilicon or aluminum, in a semiconductor device (10). The ARC is an aluminum nitride layer. During photolithography, the ARC absorbs radiation waves (30), particularly absorbing wavelengths under 300 nanometers, such as deep ultraviolet (DUV) radiation at 248 nanometers. Being absorbed by the ARC, the radiation waves are prevented from reflecting off the underlying conductive layer. Thus, resist mask (34) is patterned and developed true to the pattern on lithography mask (24), resulting in accurate replication into appropriate layers of the device.