The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 1996
Filed:
Jan. 30, 1995
Applicant:
Inventors:
Philippe Krauz, Creteil, FR;
Elchuri K Rao, Issy-Les-Moulineaux, FR;
Assignee:
France Telecom, Paris, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437161 ; 437133 ; 148D / ;
Abstract
A method of making a component presenting at least one integrated electro-optical and/or photonic function, in which at least one dielectric layer of doped SiO.sub.x is deposited on a quantum well layer based on III/V materials, and in which the resulting sample is heat treated. The thickness of said dielectric layer, the nature of the dopant [isoelectronic, activating or blocking, and/or electronically active of n-type or of p.sub.-- type], and the concentration of the doping, and also the conditions of heat treatment, in such a manner as to confer the desired electro-optical and/or photonic properties to the component.