The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 1996
Filed:
Feb. 08, 1995
Richard L Woodruff, Colorado Springs, CO (US);
Rick C Jerome, Monument, CO (US);
United Technologies Corporation, Hartford, CT (US);
Abstract
The present invention teaches a low voltage coefficient MOS capacitor, and a method of making such a capacitor, having substantially uniform parasitic effects over an operating voltage range and a low voltage coefficient. The capacitor comprises a first conductive layer superjacent a silicon on insulator ('SOI') substrate. The first conductive layer comprises heavily doped silicon having a first conductivity type, while the substrate comprises a second conductivity type. Further, the capacitor comprises an isolation trench surrounding the first conductive layer filled with a dielectric material. Positioned superjacent the first conductive layer is a dielectric layer, thereby forming a dielectric shell on all sides of the first conductive layer except for its upper face. Moreover, a second conductive layer is positioned superjacent the dielectric layer to form a low voltage coefficient capacitor.