The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 1996
Filed:
Feb. 09, 1995
Kenji Endo, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In a quantum well semiconductor laser in which a stripe-like multilayered structure having a cladding layer of a first conductivity type, a quantum well active layer, and a cladding layer of a second conductivity type is formed on a semiconductor substrate or a semiconductor base layer, and multilayered structures identical to the stripe-like multilayered structure are formed along two sides of the stripe-like multilayered structure with grooves interposed in between, where each groove has a width smaller at portions near end face portions of a resonator than at a central portion thereof, and a quantum well layer of the quantum well active layer has a smaller thickness at the portions near the end face portions of the resonator than at the central portion thereof.