The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 1996
Filed:
Mar. 22, 1995
Clayton C Williams, Salt Lake City, UT (US);
Yunji Huang, Salt Lake City, UT (US);
University of Utah Research Foundation, Salt Lake City, UT (US);
Abstract
Quantitative dopant profile measurements are performed on a nanometer scale by using a scanning capacitance microsope. A nanometer scale tip of the microscope is positioned at a semiconductor surface, and local capacitance change is measured as a function of sample bias. The method incorporates a feedback system and procedure in which the magnitude of the AC bias voltage applied to the sample is adjusted to maintain a constant capacitance change as the tip is scanned across the sample surface. A one dimensional model is used to extract dopant density profiles from the measurements made by the scanning capacitance microscope.