The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 1996
Filed:
Mar. 14, 1995
Applicant:
Inventors:
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257296 ; 257314 ; 257411 ; 257532 ;
Abstract
A capacitor includes a polycrystalline silicon layer 1 as a lower electrode layer, a dielectric layer 112, and a polycrystalline silicon layer 113 as an upper electrode layer. The dielectric layer 112 is formed by an oxynitride film 2, a silicon nitride film 3 and a top oxide film 4. A film thickness t.sub.3 of the top oxide film 4 is controlled to be less than 20 .ANG.. Capacitance of the capacitor can be increased while improving the duration of life of the dielectric layer, resulting in a highly reliable capacitor.
Quick Actions:
Ohi, Makoto. (1996). Semiconductor device having capacitor and manufacturing method therefor (U.S. Patent No. 5523596). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5523596
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