The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 1996
Filed:
Nov. 16, 1994
Satoshi Nakamura, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor device according to the invention has a channel layer, which is sandwiched by a first and a second barrier layers, and an electron supply layer for supplying the channel layer with electrons through at least one of the barrier layers. The channel layer has a superlattice structure formed by periodically repeating, in the direction of electron movement, a first and a second semiconductor material regions, each of which has a different band gap from the other. With this superlattice structure, a plurality of mini-bands are formed within a potential well, which is formed by the first and second barrier layers. Impurity concentration of the electron supply layer is so controlled that electrons may move mainly within a mini-band in which effective mass of electrons is minimum among those mini-bands. Thus, a semiconductor device having a high electron mobility in the room temperature can be obtained without requiring high purification of crystal.