The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 1996
Filed:
Feb. 14, 1995
Applicant:
Inventor:
Hideaki Kawamoto, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03C / ; C03C / ; B05D / ;
U.S. Cl.
CPC ...
216 62 ; 1566431 ; 1566561 ; 148212 ; 4273833 ; 437228 ;
Abstract
An interconnection in a semiconductor device is made of a conductive laminate including a Ti film, a TiN film and an aluminium alloy film consecutively formed on a SiO.sub.2 film grown on a Si substrate. A heat treatment of the conductive layer is performed at 450.degree.-600.degree. C. before plasma-etching to introduce nitrogen and oxygen atoms from TiN film and SiO.sub.2 film, respectively, into the Ti film. The nitrogen and oxygen atoms prevent the side-etching of the Ti film during a plasma etching of the laminate using a plasma containing chlorine atoms. An interconnection having a high reliability is obtained with a high productivity.