The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 1996
Filed:
Dec. 27, 1994
Michinori Irikawa, Yokohama, JP;
The Furukawa Electric Co., Ltd., Tokyo, JP;
Abstract
There is provided a strained superlattice light emitting device for emitting light with a wavelength band around 0.8 .mu.m that is free from polarization dependency or can emit light either in the TE or TM mode with an output level much higher than that of an ordinary bulk layer, regardless of the density of injected current or carriers. Such a device comprises an InP substrate 1 and a pair of latticematched cladding layers 2 and 6 arranged on the substrate 1 and including first and second conductive type Al(Ga) InAs layers and an active layer 4 sandwiched by the pair of cladding layers 2 and 6 and having a strained superlattice structure, wherein the well layers 4a and 4b of the active layer 4 strained superlattice structure are respectively a GaInAsP layer showing an inplane tensile strain of 0.3 to 3% relative to the substrate and a GaInAsP layer showing an in-plane compressive strain of 0.3 to 3% relative to the substrate and the barrier layer 4b of the strained superlattice structure comprises an AlGaInAs layer.