The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 1996

Filed:

Dec. 01, 1993
Applicant:
Inventors:

Jian Chen, Sunnyvale, CA (US);

Lee E Cleveland, Santa Clara, CA (US);

Shane Hollmer, Santa Clara, CA (US);

Ming-Sang Kwan, San Leandro, CA (US);

David Liu, Cupertino, CA (US);

Nader Radjy, Palo Alto, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
36518533 ; 36518502 ; 36518524 ; 36518529 ;
Abstract

A flash EPROM circuit for providing a tight erase threshold voltage distribution. The circuit includes an array of memory cells having gates, sources and drains. Bit lines are coupled to the drains of a column of cells in the memory array. A plurality of word lines are each coupled to the gates of a row of cells in the memory array. A first voltage source is coupled to the bit lines to converge threshold voltages of erased memory cells. A second voltage source is coupled to the word lines to control the threshold voltages of the erased memory cells.


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