The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 1996
Filed:
Jan. 17, 1995
Taiji Ema, Kawasaki, JP;
Kazuo Itabashi, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A thin film transistor (TFT) load type static random access memory (SRAM) which includes a memory capacitor in addition to the stray capacitance. The SRAM includes a semiconductor substrate and a memory cell provided on the semiconductor substrate. The memory cell includes first and second transfer transistors, first and second driver transistors, first and second thin film transistor loads and first and second memory capacitors. The first and second memory capacitors include a storage electrode, a dielectric layer which covers the storage electrode, and an opposing electrode formed on the dielectric layer. A connection region is provided in which the storage electrode of the first memory capacitor, the drain region of the second thin film transistor load and the gate electrode of the first driver transistor are connected.