Hole capacitor for dram cell

Abstract

A hole capacitor is formed which has a first electrode with a plurality of holes and projections. Another electrode is matched with the first electrode and separated from the first electrode by a dielectric layer. A method for making the hole capacitor includes the steps of: depositing a nitride layer and a lower oxide layer, and forming a buried contact hole, after forming an MOS transistor upon a semiconductor substrate. Thereafter depositing an in-situ doped non-single crystalline silicon layer, an undoped non-single crystalline silicon layer, and a hemispherical polysilicon layer in all in sequence with a thickness of 1500 .ANG. or over. An upper oxide film is deposited, and then, carrying out an etch-back on the upper oxide film so that the hemispherical polysilicon domes are exposed. Etching the polysilicon layers using the remaining portions of the upper oxide film remaining on the valleys of the hemispherical polysilicon as a mask, in order to form a plurality of holes perforated from the domes to the insulating layer located under the layers. The upper oxide film is removed through an etch process. Patterning a lower electrode of the capacitor, etching the lower oxide film, forming a dielectric layer on the surface of the lower electrode, and forming an upper electrode in match with the lower electrode across the dielectric layer.