The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 1996
Filed:
Aug. 17, 1994
Leslie R Avery, Flemington, NJ (US);
David Sarnoff Research Center, Inc., Princeton, NJ (US);
Abstract
An electrical circuit including an NMOS or lateral NPN bipolar transistor includes a zener diode connected thereto to provide ESD protection for the transistor. The NMOS transistor includes an N-type source, an N-type drain, a P-type channel region and a gate over and insulated from the channel region. The zener diode is electrically connected between the gate and the drain of the NMOS transistor with the anode of the zener diode being connected to the gate and the cathode of the zener diode being connected to the drain. For some purposes the anode of the zener diode is positioned close to the gate to provide the desired ESD protection. The lateral NPN bipolar transistor includes an N-type emitter and collector and a P-type base. The zener diode is connected between the collector and the base with the anode of the zener diode being connected to the base and the cathode of the zener diode being connected to the emitter.