The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 1996
Filed:
Apr. 28, 1994
Applicant:
Inventor:
Ryoichi Mukai, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437245 ; 437187 ; 437192 ; 437195 ;
Abstract
A process of producing a semiconductor device, which includes the steps of: forming an insulating film on a substrate; then etching the insulating film to form an opening through which the substrate is exposed; and then irradiating a metal molecular beam through the opening to deposit a metal film on the substrate, the metal molecular beam being irradiated at an incident angle .theta. within a range of 5 deg .ltoreq..theta..ltoreq.tan.sup.-1 (b/2a) deg ('a' and 'b' being the depth and diameter of the opening, respectively) relative to the normal of the substrate.