The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 1996
Filed:
Mar. 28, 1995
Yukinobu Murao, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor device formed at a substrate surface region is coated with a non-doped CVD silicon oxide film, and an interlayer insulating film composed of a BPSG film, a first ozone-TEOS NSG film and a second ozone-TEOS NSG film is formed on the silicon oxide film. The BPSG film has a thickness of not less than 50 nm but not greater than 200 nm, and is heat-treated at a temperature of not lower than 700.degree. C. but not higher than 800.degree. C. In addition, the first and second zone-TEOS NSG films are also heat-treated at a temperature of not lower than 700.degree. C. but not higher than 800.degree. C.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile