The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 1996
Filed:
May. 27, 1994
Tae K Yoo, Seoul, KR;
Jong S Kim, Daegujikhal, KR;
Goldstar Co., Ltd., Seoul, KR;
Abstract
A semiconductor laser capable of minimizing generation of defects at the interface between grown layers, and a method for fabricating the same. The semiconductor laser is fabricated by forming an n type buffer layer over an n typesemiconductor substrate, forming a first n type clad layer over the buffer layer, forming an active layer over the first clad layer, sequentially growing a first p type clad layer, an etch stop layer, a second p type clad layer, a p type current injection layer, a first p type evaporation-preventing layer and a second p type evaporation-preventing layer, thereby forming a second clad layer, etching the second clad layer, thereby forming a mesa-shaped ridge portion, forming a current shield layer over a portion of the second clad layer exposed upon the etching, etching a portion of the current shield layer disposed over the mesa-shaped ridge portion, thereby forming a current injection region, and exposing a portion of the second evaporation-preventing layer disposed in the current injection region, etching the exposed portion of the second evaporation-preventing layer, thereby exposing a portion of the first evaporation-preventing layer disposed beneath the exposed portion of the second evaporation-preventing layer, and forming a p type cap layer over the entire exposed surface of the resulting structure.