The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 1996
Filed:
Apr. 26, 1995
Bruce Paynter, Irvine, CA (US);
Henry J McCarrick, Huntington Beach, CA (US);
Joseph W Adamic, Jr, Fountain Valley, CA (US);
Span Instruments, Inc., Plano, TX (US);
Abstract
Semiconductor piezoresistive sensors are fabricated by a process that includes plasma enhanced chemical vapor deposition and selective laser recrystallization. An insulating dielectric layer is first vapor deposited on a flexible substrate. A layer of highly resistive, doped semiconductor material is then deposited over the insulating layer. Metal contacts for the as yet to be formed piezoresistive sensor are deposited at selected locations on the semiconductor layer. Optionally, a passivating layer is then deposited over the semiconductor layer. Through selective laser annealing, portions of the semiconductor layer between selected metal contacts are recrystallized to a preselected resistance to form piezoresistive sensor elements. The non-annealed portions of the semiconductor layer remain to act as insulators between adjacent formed sensor elements.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile