The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 1996
Filed:
Feb. 23, 1995
Carol Galli, Odenton, MD (US);
Louis L Hsu, Fishkill, NY (US);
Seiki Ogura, Hopewell Junction, NY (US);
Joseph F Shepard, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A shallow trench isolation structure is formed by a process having a reduced number of steps and thermal budget by filling trenches by liquid phase deposition of an insulating semiconductor oxide and heat treating the deposit to form a layer of high quality thermal oxide at an interface between the deposited oxide and the body of semiconductor material (e.g. substrate) into which the trench extends. This process yields an isolation structure with reduced stress and reduced tendency to develop charge leakage. The structure can be readily and easily planarized, particularly if a polish-stop layer is applied over the body of semiconductor material and voids and contamination of the deposited oxide are substantially eliminated by self-aligned deposition above the trench in the volume of apertures on a resist used to form the trench.