The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 1996
Filed:
Jul. 12, 1994
David C Tam, Redondo Beach, CA (US);
Chongwook C Choi, Redondo Beach, CA (US);
International Rectifier Corporation, El Segundo, CA (US);
Abstract
The logic circuit of the level shifting circuit of a high side MOS gate device is made reset dominant to make the circuit immune to noise glitches. The reset dominance is obtained by causing a reset signal to be produced at a wider range of high side floating supply offset voltage than that at which the set signal can be produced to prevent the chance of a set when the high side power MOSFET should be off. The reset dominance is obtained by increasing the size of the reset voltage dropping resistor or by adjusting the input threshold of the circuit reading the set and reset voltage dropping resistors.