The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 1996
Filed:
Mar. 21, 1994
Applicant:
Inventors:
Assignee:
Seiko Instruments Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437160 ; 437946 ; 437950 ;
Abstract
A PN junction device is formed by removing an inert film from a surface of an N type semiconductor layer to expose an active face, then applying a source gas containing an P type impurity component to the active face to form an impurity adsorption film, and thereafter carrying out a solid-phase diffusion of the impurity is carried out from a diffusion source composed of the P type impurity adsorption film into the N type semiconductor layer to form therein a P type semiconductor layer to thereby provide a PN junction. Lastly, a pair of electrodes are connected to the respective semiconductor layers to form the an PN junction device.