The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 1996

Filed:

Feb. 23, 1995
Applicant:
Inventors:

Yasuhiro Kobayashi, Osaka, JP;

Toyoji Chino, Toyonaka, JP;

Kenichi Matsuda, Moriguchi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 96 ; 372 45 ; 372 46 ; 372 92 ; 372 99 ;
Abstract

A vertical-cavity surface-emitting semiconductor laser includes: a p-type bottom mirror having an upper face; a p-type spacer layer covering over the entire upper face of the p-type bottom mirror; an active region including an active layer having a bottom face smaller than the upper face of the p-type bottom mirror, the active region being formed on the p-type spacer layer; an n-type spacer layer formed on the active region; and an n-type top mirror formed on the n-type spacer layer, wherein a sum d of optical path lengths of the p-type spacer layer, the active region and the n-type spacer layer in a perpendicular direction satisfies a relationship expressed by d=(1+n).cndot..lambda./2 (n: natural number) with respect to a wavelength .lambda. of light oscillated from the active region.


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