The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 1996
Filed:
Jan. 23, 1995
Hyunsang Hwang, Seoul, KR;
Goldstar Electron Co., Ltd., Cheongju, KR;
Abstract
The present invention provides a method of forming an insulating layer of a semiconductor device, in which an oxide layer having an optimum nitrogen concentration and also a sufficient thickness may be grown by independently regulating the flow rate of NO and O.sub.2 gas and supplying the NO and O.sub.2 gas to a reaction chamber. This method is such that the NO and O.sub.2 gas is supplied to the chamber by regulating the NO and O.sub.2 gas, while maintaining the inside of the chamber at a temperature of about 750.degree. C. to 1050.degree. C. for a predetermined time, wherein nitrogen is included in a Si/SiO.sub.2 interface.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile